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| BFY90 MECHANICAL DATA Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. DESCRIPTION The BFY90 is a low noise transistor intended for use in broad and narrow-band amplifiers up to 1GHz. 2.54 (0.100) Nom. 4 3 2 1 TO72 Pin 1 - Emitter Pin 2 -Base Pin 3 - Collector Pin 4 - Connected to Case ABSOLUTE MAXIMUM RATINGS VCBO VCER VCEO VEBO IC(AV) ICM Ptot Tj Tstg, Collector - Base Voltage (TA= 25C unless otherwise stated) 30V 30V 15V 2.5v 25mA 50mA 200mWC 200C -65 to +200C Collector - Emitter Voltage (RBE 50W ) Collector - Emitter Voltage Emitter - Base Voltage Average Collector Current Peak Collector Current (f 1MHz) Power Dissipation at Tamb = 25C Storage Temperature Junction Temperature Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 12/99 BFY90 ELECTRICAL CHARACTERISTICS (TA= 25C unless otherwise stated) Parameter ICBO V(BR)CEO* V(BR)CER* VCEK h21E Collector Cut Off Current Test Conditions VCB = 15V IE = 0 IB = 0 RBE 50W IC = 2mA IC = 25mA IC = 2mA IC = 25mA IE = 0. IC = 0 IC = 2mA RG RG optimum Min. 15 30 Typ. Max. 10 Unit nA V Collector Emitter Breakdown Voltage IC = 10mA Collector Emitter Breakdown Voltage IC = 10mA Collector Emitter Knee Voltage Static Forward Current Transfer Ratio DYNAMIC CHARACTERISTICS VCE = 5V f = 500MHz VCE = 5V f = 500MHz VCB = 10V f = 1MHz VCE = 5V f = 1MHz VCE = 5V f = 100kHz VCE = 5V f = 200MHz VCE = 5V f = 500MHz VCE = 5V f = 800MHz VCE = 10V f = 200MHz VCE = 10V f1 = 202MHz IC = 10mA VCE = 1V VCE = 1V 0.75 25 20 150 125 -- 1 GHz 1.3 1.5 0.8 4 3.5 dB 5 5 21 dB pF pF fT Transition Frequency C22b(1) C12e(2) Output Capacitance Open-Circuit Reverse Transfer Capacitance IC = 2mA optimum NF Noise Figure IC = 2mA RG = 50W IC = 2mA RG optimum Gp Power Gain IC = 14mA IC = 14mA f2= 205MHz PO(2) Output Power Output SWR 2 TOS sortie 208MHz 10 mW 2 dIM* = - 30dB at 2 f2 - f1 = THERMAL DATA Rth(j-a) Rth(j-c) Junction-ambient thermal resistance Junction-case thermal resistance 0.875 Max 0.575 Max C/W C/W * Pulse test tp = 300ms , d 2% (1) Shield Lead (case) not connected * Intermodulation Distortion (2) Shield Lead (case) grounded Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 12/99 |
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